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| SHINDENGEN Schottky Rectifiers (SBD) Dual S60SC4M 40V 30A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Small AE jc *oe High current capacity APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : MTO-3P Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 Z * Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V 40 V RM Repetitive Peak SurgeV Pulse width 0.5ms, duty 1/40 Reverse Voltage RRSM 45 V IO Current Average Rectified Forward50Hz sine wave, R-load, Rating for each diode Io/2, Tc 60 A Peak Surge Forward Current sine wave, Non-repetitive 1 cycle500 value, Tj= IFSM 50Hz peak A Repetitive Peak SurgeP Reverse Power 10Es, Rating of per diode, Tj=25*Z Pulse 1000 W RRSM width Mounting Torque F TOR(Recommended torque* 0.5Nm) 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage V I =30A, Pulse measurement, Rating of per diode FF Max.0.55 V IR V=VM, per diode Reverse Current R R Pulse measurement, Rating ofMax.25mA =10V, Junction Capacitance Cj f=1MHz, V Rating of per diode Typ.1000 F p R Thermal Resistance AEjc junction to case Max.0.5 Z/W * Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S60SC4M 1000 Forward Voltage 100 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] 10 Tc=25C [TYP] Pulse measurement per diode 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S60SC4M Junction Capacitance f=1MHz Tc=25C TYP per diode 10000 Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] S60SC4M 10000 Reverse Current 1000 Tc=150C [TYP] Tc=150C [MAX] Reverse Current IR [mA] 100 Tc=125C [TYP] Tc=100C [TYP] 10 Tc=75C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] S60SC4M 80 70 Reverse Power Dissipation DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] 60 50 40 30 20 10 0 0.5 SIN 0.8 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T S60SC4M 60 Forward Power Dissipation DC Forward Power Dissipation PF [W] 50 SIN 40 0.1 30 0.05 0.3 0.2 0.5 D=0.8 20 10 0 0 20 40 60 80 100 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T S60SC4M 120 Derating Curve Average Rectified Forward Current IO [A] 100 DC D=0.8 80 0.5 SIN 0.3 40 0.2 0.1 20 0.05 60 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T S60SC4M 800 Peak Surge Forward Capability IFSM 700 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 600 non-repetitive, sine wave, Tj=125C before surge current is applied 500 400 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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